Datasheet4U Logo Datasheet4U.com

BUK552-60A - PowerMOS transistor

Description

N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BUK555-100A N-Channel MOSFET INCHANGE
BUK555-100B N-Channel MOSFET INCHANGE
BUK118-50DL Monolithic temperature and overload protected logic level power MOSFET NXP Semiconductors
BUK127-50GT PowerMOS transistor Philips
BUK138-50DL Logic level TOPFET Philips

Other Datasheets by NXP Semiconductors

Part Number Description
BUK552-60B PowerMOS transistor
BUK552-100A PowerMOS transistor
BUK552-100B PowerMOS transistor
BUK553-100A PowerMOS transistor
BUK553-100B PowerMOS transistor

Full PDF Text Transcription

Click to expand full text
Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications. BUK552-60A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK552 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX. -60A 60 14 60 175 0.15 MAX. -60B 60 13 60 175 0.
Published: |