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BUK554-60H - PowerMOS transistor Logic level FET

Description

N-channel enhancement mode logic level field-effect power transistor in a plastic envelope The device is intended for use in automotive and general purpose switching applications.

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Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope The device is intended for use in automotive and general purpose switching applications. BUK554-60H QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX.
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