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BUK475-200B - PowerMOS transistor

Description

N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.

The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.

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📁 Similar Datasheet

Part Number Description Manufacturer
BUK436-100A PowerMOS transistor Philips
BUK436-100A N-Channel MOSFET INCHANGE
BUK436-100B PowerMOS transistor Philips
BUK436-100B N-Channel MOSFET INCHANGE
BUK436-200A N-Channel MOSFET INCHANGE

Other Datasheets by NXP Semiconductors

Part Number Description
BUK475-200A PowerMOS transistor
BUK475-100A PowerMOS transistor
BUK475-100B PowerMOS transistor
BUK475-60A PowerMOS transistor
BUK475-60B PowerMOS transistor

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Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK455-200A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. BUK475-200A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK475 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. -200A 200 7.6 30 150 0.23 MAX. -200B 200 7 30 150 0.
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