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Philips Semiconductors
Product specification
PowerMOS transistor Isolated version of BUK452-60A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications.
BUK472-60A/B
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK472 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. -60A 60 10 22 150 0.13 MAX. -60B 60 9.2 22 150 0.