Datasheet4U Logo Datasheet4U.com

BUK456-800A - PowerMOS transistor

Description

N-channel enhancement mode field-effect power transistor in a plastic envelope.

The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BUK456-800A N-Channel MOSFET Transistor Inchange Semiconductor
BUK456-800B N-Channel MOSFET Transistor Inchange Semiconductor
BUK456-100A N-Channel MOSFET Transistor Inchange Semiconductor
BUK456-100B N-Channel MOSFET Transistor Inchange Semiconductor
BUK456-200A N-Channel MOSFET Transistor Inchange Semiconductor

Other Datasheets by NXP Semiconductors

Part Number Description
BUK456-800B PowerMOS transistor
BUK456-1000B PowerMOS transistor
BUK456-100A PowerMOS transistor
BUK456-100B PowerMOS transistor
BUK456-200A PowerMOS transistor

Full PDF Text Transcription

Click to expand full text
Philips Semiconductors Product Specification PowerMOS transistor BUK456-800A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER BUK456 Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX. -800A 800 4 125 3 MAX. -800B 800 3.
Published: |