Datasheet4U Logo Datasheet4U.com

BUK456-100A - PowerMOS transistor

Description

N-channel enhancement mode field-effect power transistor in a plastic envelope.

The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BUK456-100A N-Channel MOSFET Transistor Inchange Semiconductor
BUK456-100B N-Channel MOSFET Transistor Inchange Semiconductor
BUK456-200A N-Channel MOSFET Transistor Inchange Semiconductor
BUK456-200B N-Channel MOSFET Transistor Inchange Semiconductor
BUK456-60A N-Channel MOSFET Transistor Inchange Semiconductor

Other Datasheets by NXP Semiconductors

Part Number Description
BUK456-1000B PowerMOS transistor
BUK456-100B PowerMOS transistor
BUK456-200A PowerMOS transistor
BUK456-200B PowerMOS transistor
BUK456-60A PowerMOS transistor

Full PDF Text Transcription

Click to expand full text
Philips Semiconductors Product specification PowerMOS transistor BUK456-100A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK456 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. -100A 100 34 150 175 0.057 MAX. -100B 100 32 150 175 0.
Published: |