Datasheet4U Logo Datasheet4U.com

BU4540AW - Silicon Diffused Power Transistor

Description

Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full pack envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors.

Features

  • exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BU4508AF Silicon NPN Power Transistor Inchange Semiconductor
BU4508AX NPN Transistor INCHANGE
BU4508DF SILICON POWER TRANSISTOR SavantIC
BU4508DX Silicon NPN Power Transistor Inchange Semiconductor
BU4522AF Silicon NPN Power Transistor Inchange Semiconductor

Other Datasheets by NXP Semiconductors

Part Number Description
BU4540AL Silicon Diffused Power Transistor
BU4540 Silicon Diffused Power Transistor
BU4506AF Silicon Diffused Power Transistor
BU4506AX Silicon Diffused Power Transistor
BU4506AZ Silicon Diffused Power Transistor

Full PDF Text Transcription

Click to expand full text
Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4540AW GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full pack envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current fall time CONDITIONS VBE = 0 TYP.
Published: |