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BU4540AL - Silicon Diffused Power Transistor

Description

Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full pack envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors.

Features

  • exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK.

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Full PDF Text Transcription

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Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4540AL GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full pack envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 TYP.
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