Datasheet4U Logo Datasheet4U.com

BU2527DF - Silicon Diffused Power Transistor

Description

New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors.

Features

  • improved RBSOA performance. QUICK.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BU2527DF SILICON POWER TRANSISTOR SavantIC
BU2527DF NPN Transistor INCHANGE
BU2527DX SILICON POWER TRANSISTOR SavantIC
BU2527DX NPN Transistor INCHANGE
BU2527A Silicon Diffused Power Transistor Philips

Other Datasheets by NXP Semiconductors

Part Number Description
BU2527DX Silicon Diffused Power Transistor
BU2527AF Silicon Diffused Power Transistor
BU2527AW Silicon Diffused Power Transistor
BU2527AX Silicon Diffused Power Transistor
BU2520A Silicon Diffused Power Transistor

Full PDF Text Transcription

Click to expand full text
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 V TYP. 6.0 1.7 MAX. 1500 800 12 30 45 5.0 2.0 UNIT V V A A W V A µs Ths ≤ 25 ˚C IC = 8.0 A; IB = 1.
Published: |