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BU2527DX - NPN Transistor

Description

High Switching Speed High Voltage Built-in Ddamper Ddiode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

resolution monitors.

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Full PDF Text Transcription

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isc Silicon NPN Power Transistor INCHANGE Semiconductor BU2527DX DESCRIPTION ·High Switching Speed ·High Voltage ·Built-in Ddamper Ddiode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7.
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