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BLF6G21-10G - Power LDMOS Transistor

Description

Table 1.

Typical performance IDq = 100 mA; Tcase = 25 °C in a common source class-AB production test circuit.

Features

  • I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 100 mA: N Average output power = 0.7 W N Gain = 18.5 dB N Efficiency = 15 % N ACPR =.
  • 50 dBc I Typical 1-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 100 mA: N Average output power = 2 W N Gain = 19.3 dB N Efficiency = 31 % N ACPR =.
  • 39 dBc I Easy power control I Integrated ESD protection I Excellent rug.

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www.DataSheet4U.com BLF6G21-10G Power LDMOS transistor Rev. 01 — 11 May 2009 Objective data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical performance IDq = 100 mA; Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA 1-carrier W-CDMA [1] f (MHz) 2110 to 2170 2110 to 2170 VDS (V) 28 28 PL(AV) (W) 0.7 2 Gp (dB) 18.5 19.3 ηD (%) 15 31 ACPR (dBc) −50[1] −39[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.
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