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BLF368 - VHF push-pull power MOS transistor

Description

Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for broadcast transmitter applications in the VHF frequency range.

The transistor is encapsulated in a 4-lead SOT262A1 balanced flange package, with two ceramic caps.

Features

  • High power gain.
  • Easy power control.
  • Good thermal stability.
  • Gold metallization ensures excellent reliability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D091 BLF368 VHF push-pull power MOS transistor Product specification Supersedes data of September 1992 1998 Jul 29 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for broadcast transmitter applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT262A1 balanced flange package, with two ceramic caps. The mounting flange provides the common source connection for the transistors.
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