Datasheet4U Logo Datasheet4U.com

BLF348 - VHF linear push-pull power MOS transistor

Description

Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for broadcast transmitter applications in the VHF frequency range.

The transistor is encapsulated in a 4-lead, SOT262 A1 balanced flange envelope, with two ceramic caps.

Features

  • High power gain.
  • Easy power control.
  • Good thermal stability.
  • Gold metallization ensures excellent reliability.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BLF082 surface Mountable RFI Filters Tyco Electronics
BLF0910H6L500 Power LDMOS transistor Ampleon
BLF0910H6LS500 Power LDMOS transistor Ampleon
BLF0910H9LS600 Power LDMOS transistor Ampleon
BLF1043 UHF power LDMOS transistor Ampleon

Other Datasheets by NXP Semiconductors

Part Number Description
BLF346 VHF power MOS transistor
BLF368 VHF push-pull power MOS transistor
BLF369 VHF power LDMOS transistor
BLF378 VHF push-pull power MOS transistor
BLF0810-180 Base station LDMOS transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DISCRETE SEMICONDUCTORS DATA SHEET BLF348 VHF linear push-pull power MOS transistor Product specification October 1992 Philips Semiconductors Product specification VHF linear push-pull power MOS transistor FEATURES • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for broadcast transmitter applications in the VHF frequency range. The transistor is encapsulated in a 4-lead, SOT262 A1 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors.
Published: |