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BLF147 - VHF power MOS transistor

Description

Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range.

The transistor is encapsulated in a 4-lead, SOT121 flange envelope, with a ceramic cap.

All leads are isolated from the flange.

Features

  • High power gain.
  • Low intermodulation distortion.
  • Easy power control.
  • Good thermal stability.
  • Withstands full load mismatch. ook, halfpage 4 BLF147 PIN.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BLF147 VHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification VHF power MOS transistor FEATURES • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability • Withstands full load mismatch. ook, halfpage 4 BLF147 PIN CONFIGURATION 3 d DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range. The transistor is encapsulated in a 4-lead, SOT121 flange envelope, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications.
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