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BLF145 - HF power MOS transistor

Description

Silicon N-channel enhancement mode vertical D-MOS transistor designed for SSB transmitter applications in the HF frequency range.

The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap.

All leads are isolated from the flange.

Features

  • High power gain.
  • Low noise figure.
  • Good thermal stability.
  • Withstands full load mismatch. d k, halfpage BLF145 PIN.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BLF145 HF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification HF power MOS transistor FEATURES • High power gain • Low noise figure • Good thermal stability • Withstands full load mismatch. d k, halfpage BLF145 PIN CONFIGURATION 1 4 DESCRIPTION g Silicon N-channel enhancement mode vertical D-MOS transistor designed for SSB transmitter applications in the HF frequency range. The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (VGS) groups are available on request. PINNING - SOT123 PIN 1 2 3 4 drain source gate source DESCRIPTION MBB072 s 2 3 MSB057 Fig.1 Simplified outline and symbol.
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