Click to expand full text
BFU910F
NPN wideband silicon germanium RF transistor
Rev. 2 — 16 January 2015
Product data sheet
1. Product profile
1.1 General description
NPN silicon germanium RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
The BFU910F is suitable for small signal applications up to 20 GHz.
1.2 Features and benefits
Low noise high gain microwave transistor Minimum noise figure (NFmin) = 0.65 dB at 12 GHz Maximum stable gain 14.2 dB at 12 GHz 90 GHz fT SiGe technology
1.3 Applications
Ku band DBS Low-Noise blocks
1.4 Quick reference data
Table 1.
BFU910F Datasheet
