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BFU590G
NPN wideband silicon RF transistor
Rev. 1 — 28 April 2014
Product data sheet
1. Product profile
1.1 General description
NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package.
The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.
1.2 Features and benefits
Medium power, high linearity, high breakdown voltage RF transistor AEC-Q101 qualified Maximum stable gain 13 dB at 900 MHz PL(1dB) 21.5 dBm at 900 MHz 8.5 GHz fT silicon technology
1.3 Applications
Automotive applications Broadband amplifiers Medium power amplifiers (500 mW at a frequency of 433 MHz or 866 MHz) Large signal amplifiers for ISM applications
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BFU590G Datasheet
