Datasheet4U Logo Datasheet4U.com

BFU540 - NPN SiGe wideband transistor

Description

DESCRIPTION NPN SiGe wideband transistor for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.

Features

  • Very high power gain.
  • Very low noise figure.
  • High transition frequency.
  • Emitter is thermal lead.
  • Low feedback capacitance.
  • 45 GHz SiGe process.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BFU580Q NPN Transistor INCHANGE
BFU450C FILTERS Murata Electronics
BFU450C4N FILTERS Murata Electronics
BFU450K3 FILTERS Murata Electronics
BFU630F NPN wideband silicon RF transistor NXP Semiconductors

Other Datasheets by NXP Semiconductors

Part Number Description
BFU510 NPN SiGe wideband transistor
BFU520 NPN wideband silicon RF transistor
BFU520A NPN wideband silicon RF transistor
BFU520W NPN wideband silicon RF transistor
BFU520X NPN wideband silicon RF transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFU540 NPN SiGe wideband transistor Product specification Supersedes data of 2002 Jan 28 2003 Jun 12 Philips Semiconductors Product specification NPN SiGe wideband transistor FEATURES • Very high power gain • Very low noise figure • High transition frequency • Emitter is thermal lead • Low feedback capacitance • 45 GHz SiGe process. APPLICATIONS • RF front end • Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.) • Radar detectors • Pagers • Satellite television tuners (SATV) • High frequency oscillators. Marking code: A4.
Published: |