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BF824W - PNP medium frequency transistor

Description

PNP medium frequency transistor in a SOT323 plastic package.

1.

∗ = - : Made in Hong Kong.

Features

  • Low current (max. 25 mA).
  • Low voltage (max. 30 V).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BF824W PNP medium frequency transistor Product data sheet Supersedes data of 1997 Jul 07 1999 Apr 15 NXP Semiconductors PNP medium frequency transistor Product data sheet BF824W FEATURES • Low current (max. 25 mA) • Low voltage (max. 30 V). APPLICATIONS • RF stages in FM front-ends in common base configuration. DESCRIPTION PNP medium frequency transistor in a SOT323 plastic package. MARKING TYPE NUMBER BF824W MARKING CODE(1) F8∗ Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. PINNING PIN 1 2 3 base emitter collector DESCRIPTION handbook, halfpage 3 3 1 1 Top view 2 MAM048 2 Fig.1 Simplified outline (SOT323) and symbol.
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