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BF824 - PNP medium frequency transistor

Description

PNP medium frequency transistor in a SOT23 plastic package.

1.

∗ = p : Made in Hong Kong.

Features

  • Low current (max. 25 mA).
  • Low voltage (max. 30 V).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BF824 PNP medium frequency transistor Product data sheet Supersedes data of 1999 Apr 15 2004 Jan 16 NXP Semiconductors PNP medium frequency transistor Product data sheet BF824 FEATURES • Low current (max. 25 mA) • Low voltage (max. 30 V). APPLICATIONS • RF stages in FM front-ends in common base configuration. PINNING PIN 1 2 3 base emitter collector DESCRIPTION DESCRIPTION PNP medium frequency transistor in a SOT23 plastic package. MARKING TYPE NUMBER BF824 MARKING CODE(1) F8∗ Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. ∗ = W : Made in China. handbook, halfpage 3 1 Top view 1 2 MAM256 3 2 Fig.1 Simplified outline (SOT23) and symbol.
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