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BF1118WR - Silicon RF switches

This page provides the datasheet information for the BF1118WR, a member of the BF1118 Silicon RF switches family.

Datasheet Summary

Description

These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode.

The BF1118, BF1118R, BF1118W and BF1118WR are encapsulated in the SOT143B, SOT143R, SOT343N and SOT343R respectively.

Features

  • Specially designed for low loss RF switching up to 1 GHz 1.3.

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Datasheet preview – BF1118WR

Datasheet Details

Part number BF1118WR
Manufacturer NXP
File Size 170.33 KB
Description Silicon RF switches
Datasheet download datasheet BF1118WR Datasheet
Additional preview pages of the BF1118WR datasheet.

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Full PDF Text Transcription

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BF1118; BF1118R; BF1118W; BF1118WR Silicon RF switches Rev. 3 — 14 November 2014 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are encapsulated in the SOT143B, SOT143R, SOT343N and SOT343R respectively. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET can be isolated from ground with the diode, resulting in low losses. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges. 1.2 Features and benefits  Specially designed for low loss RF switching up to 1 GHz 1.
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