BF1118 Datasheet PDF - NXP Silicon RF switches Specs

BF1118 - Silicon RF switches

Datasheet Summary

Description

These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode.

The BF1118, BF1118R, BF1118W and BF1118WR are encapsulated in the SOT143B, SOT143R, SOT343N and SOT343R respectively.

Features

Specially designed for low loss RF switching up to 1 GHz 1.3.

Datasheet Details

Part number	BF1118
Manufacturer	NXP
File Size	170.33 KB
Description	Silicon RF switches
Datasheet	BF1118 Datasheet
Additional preview pages of the BF1118 datasheet.

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Full PDF Text Transcription

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BF1118; BF1118R; BF1118W; BF1118WR Silicon RF switches Rev. 3 — 14 November 2014 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are encapsulated in the SOT143B, SOT143R, SOT343N and SOT343R respectively. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET can be isolated from ground with the diode, resulting in low losses. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges. 1.2 Features and benefits  Specially designed for low loss RF switching up to 1 GHz 1.

Published: Oct 21, 2024 |