Download BAV10 Datasheet PDF
NXP Semiconductors
BAV10
FEATURES - Hermetically sealed leaded glass SOD27 (DO-35) package - High switching speed: max. 6 ns - General application - Continuous reverse voltage: max. 60 V - Repetitive peak reverse voltage: max. 60 V - Repetitive peak forward current: max. 600 m A. The diode is type branded. handbook, halfpage k DESCRIPTION The BAV10 is a high-speed switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package. a MAM246 APPLICATIONS - High-speed switching. Fig.1 Simplified outline (SOD27; DO-35) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 100 µs t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed circuit-board;...