A3M39TL039 Datasheet Power Amplifier Module

Manufacturer: NXP Semiconductors

A3M39TL039 power amplifier module by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	A3M39TL039
Manufacturer	NXP Semiconductors
File Size	458.81 KB
Description	Power Amplifier Module
Datasheet	A3M39TL039 Datasheet

General Description

Pin Number 1, 13, 14, 15, 16, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27 2, 12 3 4 5 6 7 8 9 10 11 17 Pin Function GND N.C.

VDC2 VDC1 RFin VGP2 VGP1 VGC

Overview

NXP Semiconductors Technical Data Power Amplifier Module for LTE and 5G The A3M39TL039 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint.

Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads.

The field--proven LDMOS power amplifiers are designed for TDD and FDD LTE systems.

Key Features

Frequency: 3700.
3980 MHz.
Advanced high performance in--package Doherty.
Fully matched (50 ohm input/output, DC blocked).
Designed for low complexity analog or digital linearization systems Document Number: A3M39TL039 Rev. 0, 11/2020 A3M39TL039 3700.
3980 MHz, 27 dB, 8 W Avg.

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