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PH9030L
N-channel TrenchMOS logic level FET
Rev. 01 — 29 July 2008 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
High efficiency due to low switching and conduction losses Suitable for logic level gate drive sources
1.3 Applications
DC-to-DC convertors Notebook computers Portable equipment Switched-mode power supplies
1.4 Quick reference data
Table 1. VDS ID Ptot Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3 Tmb = 25 °C; see Figure 2 Min Typ Max 30 63 62.