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PH1955L
N-channel TrenchMOS logic level FET
Rev. 01 — 15 August 2005
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Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
1.2 Features
s Logic level threshold s 175 °C rated s Low on-state resistance s Surface-mounted package
1.3 Applications
s DC-to-DC converters s Motors, lamps and solenoids s General purpose power switching s 12 V and 24 V loads
1.4 Quick reference data
s VDS ≤ 55 V s RDSon ≤ 17.3 mΩ s ID ≤ 40 A s QGD = 8 nC (typ)
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