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PH1930AL
N-channel TrenchMOS logic level FET
Rev. 03 — 12 January 2010
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications.
1.2 Features and benefits
High efficiency due to low switching and conduction losses
Suitable for logic level gate drive sources
1.3 Applications
Consumer applications Desktop Voltage Regulator Module
(VRM)
Notebook Voltage Regulator Module (VRM)
1.4 Quick reference data
Table 1.
PH1930AL Datasheet
