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BUK9E06-55A - TrenchMOS logic level FET

Description

N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

Product availability: BUK9506-55A in SOT78 (TO-220AB); BUK9606-55A in SOT404 (D2-PAK); BUK9E06-55A in SOT226 (I2-PAK).

2.

Features

  • s s s s TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3.

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Datasheet Details

Part number BUK9E06-55A
Manufacturer NXP Semiconductors
File Size 176.37 KB
Description TrenchMOS logic level FET
Datasheet download datasheet BUK9E06-55A Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com BUK9506-55A; BUK9606-55A; BUK9E06-55A TrenchMOS™ logic level FET Rev. 03 — 23 July 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9506-55A in SOT78 (TO-220AB); BUK9606-55A in SOT404 (D2-PAK); BUK9E06-55A in SOT226 (I2-PAK). 2. Features s s s s TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3. Applications c c s Automotive and general purpose power switching: x 12 V and 24 V loads x Motors, lamps and solenoids. 4.
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