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BUK954R4-40B - TrenchMOS logic level FET

Download the BUK954R4-40B datasheet PDF. This datasheet also covers the BUK964R4-40B variant, as both devices belong to the same trenchmos logic level fet family and are provided as variant models within a single manufacturer datasheet.

General Description

N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.

Key Features

  • s Very low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible. 1.3.

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Note: The manufacturer provides a single datasheet file (BUK964R4-40B_NXPSemiconductors.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for BUK954R4-40B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BUK954R4-40B. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com BUK95/96/9E4R4-40B TrenchMOS™ logic level FET Rev. 02 — 13 October 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field...

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data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. 1.2 Features s Very low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 961 mJ s ID ≤ 75 A s RDSon = 3.9 mΩ (typ) s Ptot ≤ 254 W. 2.

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