BUK954R2-55B - N-channel TrenchMOS logic level FET
NXP Semiconductors
Download the BUK954R2-55B datasheet PDF.
This datasheet also covers the BUK964R2-55B variant, as both devices belong to the same n-channel trenchmos logic level fet family and are provided as variant models within a single manufacturer datasheet.
General Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
Key Features
Low conduction losses due to low on-state resistance.
Q101 compliant.
Suitable for logic level gate drive sources.
Suitable for thermally demanding environments due to 175 °C rating
1.3.
Note: The manufacturer provides a single datasheet file (BUK964R2-55B_NXPSemiconductors.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for BUK954R2-55B (Reference)
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BUK954R2-55B. For precise diagrams, and layout, please refer to the original PDF.
BUK954R2-55B N-channel TrenchMOS logic level FET Rev. 03 — 8 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mod...
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profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low on-state resistance Q101 compliant Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications 12 V and 24 V loads Automotive systems General purpose power switching Motors, lamps and solenoids 1.4 Quick reference
BUK954R2-55B Datasheet
