Download the BUK7607-30B datasheet PDF.
This datasheet also covers the BUK7507-30B variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
Key Features
AEC Q101 compliant.
Low conduction losses due to low
on-state resistance.
Suitable for standard level gate drive sources.
Suitable for thermally demanding environments due to 175 °C rating
1.3.
Note: The manufacturer provides a single datasheet file (BUK7507-30B-NXPSemiconductors.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for BUK7607-30B (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BUK7607-30B. For precise diagrams, and layout, please refer to the original PDF.
D2PAK BUK7607-30B N-channel TrenchMOS standard level FET Rev. 02 — 21 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel...
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et 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Low conduction losses due to low on-state resistance Suitable for standard level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications 12 V loads Automotive systems General purpose power switching Motors, lamps and solenoids 1.4 Qu
BUK7607-30B Datasheet
