Download the BUK7611-55B datasheet PDF.
This datasheet also covers the BUK7E11-55B variant, as both devices belong to the same trenchmos-tm standard level fet family and are provided as variant models within a single manufacturer datasheet.
General Description
N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
Key Features
s Very low on-state resistance s 175 °C rated s Q101 compliant s Standard level compatible. 1.3.
Note: The manufacturer provides a single datasheet file (BUK7E11-55B_NXPSemiconductors.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for BUK7611-55B (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BUK7611-55B. For precise diagrams, and layout, please refer to the original PDF.
BUK75/76/7E11-55B TrenchMOS™ standard level FET Rev. 02 — 11 November 2003 www.DataSheet4U.com Product data 1. Product profile 1.1 Description N-channel enhancement mode fi...
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ct data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. 1.2 Features s Very low on-state resistance s 175 °C rated s Q101 compliant s Standard level compatible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V and 24 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 173 mJ s ID ≤ 75 A s RDSon = 9.9 mΩ (typ) s Ptot ≤ 157 W. 2.
BUK7611-55B Datasheet
