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BLF6G38-50 - WiMAX power LDMOS transistor

Description

50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.

Features

  • I Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of 3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V, an IDq of 450 mA, a power gain of 14 dB, a drain efficiency of 23 % and a peak output power of 70 W: I Qualified up to a maximum VDS operation of 32 V I Suitable for operation in the 3.4 GHz to 3.8 GHz frequency ran.

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Datasheet Details

Part number BLF6G38-50
Manufacturer NXP Semiconductors
File Size 122.37 KB
Description WiMAX power LDMOS transistor
Datasheet download datasheet BLF6G38-50 Datasheet

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Full PDF Text Transcription

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BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor Rev. 01 — 12 February 2008 www.DataSheet4U.com Preliminary data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 1-carrier N-CDMA[2] [1] [2] [3] f (MHz) 3400 to 3600 VDS PL(AV) (V) 28 (W) 9 PL(M)[1] Gp (W) 70 14 ηD 23 ACPR885k ACPR1980k (dBc) −64[3] −49[3] (dB) (%) (dBc) PL(M) stands for peak output power. Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.23 MHz. Measured within 30 kHz bandwidth.
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