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BLF6G38-100 - WiMAX power LDMOS transistor

Description

100 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.

Features

  • I Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of 3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V and an IDq of 1050 mA: I Qualified up to a maximum VDS operation of 32 V I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation I Interna.

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Datasheet Details

Part number BLF6G38-100
Manufacturer NXP Semiconductors
File Size 122.74 KB
Description WiMAX power LDMOS transistor
Datasheet download datasheet BLF6G38-100 Datasheet

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Full PDF Text Transcription

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BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 01 — 11 November 2008 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 1-carrier N-CDMA[1] [1] [2] f (MHz) 3400 to 3600 VDS PL(AV) (V) 28 (W) 18.5 PL(p) Gp (W) 130 13 ηD ACPR885k (dBc) ACPR1980k (dBc) −65[2] (dB) (%) 21.5 −47.5[2] Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.23 MHz. Measured within 30 kHz bandwidth.
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