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NTE478 - Silicon NPN Transistor

Description

The NTE478 is a 12.5 Volt epitaxial silicon NPN planar transistor designed primarily for VHF communications.

This device utilizes diffused emitter resistors to achieve infinite VSWR under operating conditions, and is internally input matched to optimize power gain and efficiency over the band.

Features

  • D Designed for VHF Military and Commercial Equipment D 100W Min with Greater than 6.0dB Gain D Withstands Infinite VSWR under Operating Conditions D Low Intermodulation Distortion (.
  • 32dB) D Diffused Emitter Resistors Absolute Maximum Ratings: (TC = +25°C unless othrwise specified) Collector.
  • Base Voltage, VCBO.
  • 36V Collector.
  • Emitter Voltage, VCEO.

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Datasheet Details

Part number NTE478
Manufacturer NTE Electronics (defunct)
File Size 22.60 KB
Description Silicon NPN Transistor
Datasheet download datasheet NTE478 Datasheet

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Full PDF Text Transcription

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NTE478 Silicon NPN Transistor RF Power Output, PO = 100W @ 175MHz Description: The NTE478 is a 12.5 Volt epitaxial silicon NPN planar transistor designed primarily for VHF communications. This device utilizes diffused emitter resistors to achieve infinite VSWR under operating conditions, and is internally input matched to optimize power gain and efficiency over the band. Features: D Designed for VHF Military and Commercial Equipment D 100W Min with Greater than 6.0dB Gain D Withstands Infinite VSWR under Operating Conditions D Low Intermodulation Distortion (–32dB) D Diffused Emitter Resistors Absolute Maximum Ratings: (TC = +25°C unless othrwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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