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NTE471 - Silicon NPN Transistor

Description

The NTE471 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications.

of the

art diffused emitter ballasting for improved ruggedness and reliability.

Features

  • D Better than 15dB Gain at 30MHz and 100W (CW/PEP) D Diffused Emitter Ballasting D Withstands Infinite Mismatch at Operating Conditions D Low Inductance Stripline Package D Frequency = 30MHz D Power Out = 100 Watts D Voltage = 28 Volts D Power Gain = 15dB Absolute Maximum Ratings: (TC = +25°C unless otherweise specified) Collector.
  • Base Voltage, VCBO.
  • 65V Collector.
  • Emitter Voltage, V.

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Datasheet Details

Part number NTE471
Manufacturer NTE Electronics (defunct)
File Size 23.06 KB
Description Silicon NPN Transistor
Datasheet download datasheet NTE471 Datasheet

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Full PDF Text Transcription

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NTE471 Silicon NPN Transistor RF Power Output PO = 100W @ 30MHz Description: The NTE471 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes state–of–the–art diffused emitter ballasting for improved ruggedness and reliability. Features: D Better than 15dB Gain at 30MHz and 100W (CW/PEP) D Diffused Emitter Ballasting D Withstands Infinite Mismatch at Operating Conditions D Low Inductance Stripline Package D Frequency = 30MHz D Power Out = 100 Watts D Voltage = 28 Volts D Power Gain = 15dB Absolute Maximum Ratings: (TC = +25°C unless otherweise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V Collector–Emitter Voltage, VCEO . . .
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