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NTE349 Silicon NPN Transistor RF Power Amp, Driver
Description: The NTE349 is a silicon NPN transistor in a T72H type package designed primarily for use in 13.6V VHF large–signal amplifier applications required in military and industrial equipment to 240MHz. Features: D Specified 13.6V, 175MHz Characteristics: Output Power = 10W Minimum Gain = 5.2dB Efficiency = 50% Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE349 Datasheet
