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NTE342 - Silicon NPN Transistor

Description

The NTE342 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications.

Features

  • D High Power Gain: Gpe ≥ 10dB (VCC = 13.5V, PO = 6W, f = 175MHz) D Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.2V, PO = 6W, f = 175MHz.

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Datasheet Details

Part number NTE342
Manufacturer NTE Electronics (defunct)
File Size 21.93 KB
Description Silicon NPN Transistor
Datasheet download datasheet NTE342 Datasheet

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Other Datasheets by NTE Electronics (defunct)

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Full PDF Text Transcription

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NTE342 Silicon NPN Transistor RF Power Output (PO = 6W, 175MHz) Description: The NTE342 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 10dB (VCC = 13.5V, PO = 6W, f = 175MHz) D Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.2V, PO = 6W, f = 175MHz Application: D 4 to 5 Watt Output Power Amplifiers Applications in VHF band Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Collector–Emitter Voltage (RBE = ∞), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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