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NTE347 - Silicon NPN Transistor

Description

The NTE347 is designed for 13.6 volt, VHF large signal power amplifier applications required in military and industrial equipment operating to 240MHz.

Features

  • D Low lead inductance stripline package for easier design and increased broadband capability. D Balanced Emitter Construction for increased Safe Operating Area. The NTE347 is designed to withstand an Open or Shorted Load at rated Output Power. D Specified 13.6 volt, 175MHz Characteristics.
  • Output Power = 3.0 Watts Minimum Gain = 8.2dB Efficiency = 50% Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector.
  • Emitter Voltage, VCEO.

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Datasheet Details

Part number NTE347
Manufacturer NTE Electronics (defunct)
File Size 100.75 KB
Description Silicon NPN Transistor
Datasheet download datasheet NTE347 Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com NTE347 Silicon NPN Transistor RF Power Output PO = 3W @ 175MHz Description: The NTE347 is designed for 13.6 volt, VHF large signal power amplifier applications required in military and industrial equipment operating to 240MHz. Features: D Low lead inductance stripline package for easier design and increased broadband capability. D Balanced Emitter Construction for increased Safe Operating Area. The NTE347 is designed to withstand an Open or Shorted Load at rated Output Power. D Specified 13.6 volt, 175MHz Characteristics− Output Power = 3.0 Watts Minimum Gain = 8.2dB Efficiency = 50% Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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