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NTE3320 - Insulated Gate Bipolar Transistor

Features

  • D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode.

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Datasheet Details

Part number NTE3320
Manufacturer NTE Electronics (defunct)
File Size 20.87 KB
Description Insulated Gate Bipolar Transistor
Datasheet download datasheet NTE3320 Datasheet

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Full PDF Text Transcription

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NTE3320 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Gate–Emitter Voltage, VGES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Collector Current, IC DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A Pulse (1ms) . . . . . . . . . . . . . . . . . . . . . . .
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