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NTE332 - Silicon Complementary Transistors

Download the NTE332 datasheet PDF. This datasheet also covers the NTE331 variant, as both devices belong to the same silicon complementary transistors family and are provided as variant models within a single manufacturer datasheet.

Description

The NTE331 (NPN) and NTE332 (PNP) are silicon epitaxial base complementary power transistors in a TO

220 plastic package intended for use in power linear and switching applications.

Base Voltage (IE = 0), VCBO

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NTE331_NTEElectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NTE332
Manufacturer NTE Electronics (defunct)
File Size 21.42 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE332 Datasheet

📁 Similar Datasheet

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Other Datasheets by NTE Electronics (defunct)

Part Number Description
NTE3320 Insulated Gate Bipolar Transistor
NTE3321 Insulated Gate Bipolar Transistor
NTE3322 Insulated Gate Bipolar Transistor
NTE3323 Insulated Gate Bipolar Transistor
NTE330 Germanium PNP Transistor

Full PDF Text Transcription

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NTE331 (NPN) & NTE332 (PNP) Silicon Complementary Transistors Audio Power Amp, Switch Description: The NTE331 (NPN) and NTE332 (PNP) are silicon epitaxial–base complementary power transistors in a TO–220 plastic package intended for use in power linear and switching applications. Absolute Maximum Ratings: Collector–Base Voltage (IE = 0), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter–Base Voltage (IC = 0), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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