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NTE329 - Silicon NPN Transistor

Description

The NTE329 is designed primarily for use in large

signal output amplifier stages.

Band communications equipment operating to 30MHz.

modulation in AM circuits.

Features

  • D Specified 12.5V, 28MHz Characteristic: Power Output = 3.5W Power Gain = 10dB Efficiency = 70% Typical Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . . 30V Collector.
  • Base Voltage, VCBO.
  • 60V Emitter.
  • Base Voltage, VEBO.

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Datasheet Details

Part number NTE329
Manufacturer NTE Electronics (defunct)
File Size 24.17 KB
Description Silicon NPN Transistor
Datasheet download datasheet NTE329 Datasheet

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Full PDF Text Transcription

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NTE329 Silicon NPN Transistor RF Power Amp, CB Description: The NTE329 is designed primarily for use in large–signal output amplifier stages. Intended for use in Citizen–Band communications equipment operating to 30MHz. High breakdown voltages allow a high percentage of up–modulation in AM circuits. Features: D Specified 12.5V, 28MHz Characteristic: Power Output = 3.5W Power Gain = 10dB Efficiency = 70% Typical Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . .
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