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NTE322 - Silicon NPN Transistor

Description

The NTE322 is a silicon NPN RF power transistor in a TO202N type package designed for use in Citizen Band and other high

frequency communications equipment operating to 30MHz.

modulation in AM circuits.

Features

  • D Output Power: 3.5W (Min) @ VCC = 13.6V D Power Gain: 11.5dB (Min) D High Collector Emitter Breakdown Voltage: V(BR)CES ≥ 65V D DC Current Gain: Linear to 500mA Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCES.
  • . . . . 65V Emitter.
  • Base Voltage, VEB.
  • . . . . 3V Continuous Collector Curr.

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Datasheet Details

Part number NTE322
Manufacturer NTE Electronics (defunct)
File Size 27.21 KB
Description Silicon NPN Transistor
Datasheet download datasheet NTE322 Datasheet

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Full PDF Text Transcription

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NTE322 Silicon NPN Transistor RF Power Output Description: The NTE322 is a silicon NPN RF power transistor in a TO202N type package designed for use in Citizen–Band and other high–frequency communications equipment operating to 30MHz. Higher breakdown voltages allow a high percentage of up–modulation in AM circuits. Features: D Output Power: 3.5W (Min) @ VCC = 13.6V D Power Gain: 11.5dB (Min) D High Collector Emitter Breakdown Voltage: V(BR)CES ≥ 65V D DC Current Gain: Linear to 500mA Absolute Maximum Ratings: Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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