NTE326 - Silicon P-Channel JFET Transistor

NTE Electronics (defunct)

NTE326 silicon p-channel jfet transistor by NTE - Datasheet Preview

Datasheet Details

Part number	NTE326
Manufacturer	NTE Electronics (defunct)
File Size	21.37 KB
Description	Silicon P-Channel JFET Transistor
Datasheet	NTE326 Datasheet

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Full PDF Text Transcription

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NTE326 Silicon P–Channel JFET Transistor General Purpose AF Amplifier Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Reverse Gate–Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Forward Gate Current, IG(f) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 310mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Published: May 9, 2005 |