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NTE3085 Optoisolator Photon Coupled Bilateral Analog FET
Description: The NTE3085 consists of a gallium arsenide infrared emitting diode coupled to a symmetrical silicon photo detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion–free control of low AC and DC analog signals.
Features: As A Remote Variable Resistor D ≤ 100Ω to ≥ 300MΩ D ≥ 99.9% Linearity D ≤ 15pF Shunt Capacitance D ≥ 100GΩ I/O Isolation Resistance
As An Analog Signal Switch D Extremely Low Offset Voltage D 60VP–P Signal Capability D No Charge Injection or Latchup D ton, toff ≤ 15µs
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Infrared Emitting Diode Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . .
NTE3085 Datasheet
