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NTE3083 Optoisolator NPN Darlington Transistor Output
Description: The NTE3083 contains a gallium arsenide infrared emitter optically coupled to a silicon planer photo– darlington in a 6–Lead DIP type package. Features: D High Sensitivity: 1mA on the Input will Sink a TTL gate D High Isolation: 3550VDC, 1012Ω, 0.5pF Absolute Maximum Ratings: Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +100°C Lead Temperature (During Soldering, 10sec), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260°C Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . .
NTE3083 Datasheet
