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NTE2929 - N-Channel MOSFET

Features

  • D Low Drain.
  • Source ON Resistance: RDS(on) = 2.3W Typ D High Forward Transfer Admittance: |Yfs| = 4.4S Typ D Low Leakage Current: IDSS = 100mA Max (VDS = 720V) D Enhancement Mode: Vth = 2.0 to 4.0V (VDS = 10V, ID = 1mA).

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Datasheet Details

Part number NTE2929
Manufacturer NTE Electronics (defunct)
File Size 69.08 KB
Description N-Channel MOSFET
Datasheet download datasheet NTE2929 Datasheet

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Full PDF Text Transcription

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NTE2929 MOSFET N−Channel, Enhancement Mode TO−220 Full Pack Type Package Features: D Low Drain−Source ON Resistance: RDS(on) = 2.3W Typ D High Forward Transfer Admittance: |Yfs| = 4.4S Typ D Low Leakage Current: IDSS = 100mA Max (VDS = 720V) D Enhancement Mode: Vth = 2.0 to 4.0V (VDS = 10V, ID = 1mA) Applications: D DC−DC Converter D Motor Driver G D S Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V Drain−Gate Voltage (RGS = 20kW), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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