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NTE2909 - N-Channel MOSFET

Description

The NTE2909 is a Power MOSFET in a TO220 type package that utilizes advanced processing techniques to achieve extremely low on

resistance per silicon area.

Features

  • D Ultra Low ON.
  • Resistance D Dynamic dv/dt Rating D +1755C Operating Temperature D Fast Switching D Fully Avalanche Rated D G S Absolute Maximum Ratings: Continuous TTCC = = Drain Current +255C.
  • . +1005C . . . . . . (V. . G. S. = . . . . 10V), . ID.

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Datasheet Details

Part number NTE2909
Manufacturer NTE Electronics (defunct)
File Size 75.07 KB
Description N-Channel MOSFET
Datasheet download datasheet NTE2909 Datasheet

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Full PDF Text Transcription

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NTE2909 MOSFET N−Channel, Enhancement Mode High Speed Switch Description: The NTE2909 is a Power MOSFET in a TO220 type package that utilizes advanced processing techniques to achieve extremely low on−resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design provides an extremely efficient and reliable device for use in a wide variety of applications. Features: D Ultra Low ON−Resistance D Dynamic dv/dt Rating D +1755C Operating Temperature D Fast Switching D Fully Avalanche Rated D G S Absolute Maximum Ratings: Continuous TTCC = = Drain Current +255C . . . . . . +1005C . . . . . .(V. .G.S. ..... = .. .. 10V), ..... ..... .ID. . ... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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