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NTE2900 - N-Channel MOSFET

Features

  • D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements D G S Absolute Maximum Ratings: Continuous TTCC = = Drain Current +255C.
  • . +1005C . . . . . . (V. . G. S. = . . . . 10V), . ID. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A 8.5A.

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Datasheet Details

Part number NTE2900
Manufacturer NTE Electronics (defunct)
File Size 61.76 KB
Description N-Channel MOSFET
Datasheet download datasheet NTE2900 Datasheet

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Full PDF Text Transcription

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NTE2900 MOSFET N−Ch, Enhancement Mode High Speed Switch TO220 Type Package Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements D G S Absolute Maximum Ratings: Continuous TTCC = = Drain Current +255C . . . . . . +1005C . . . . . .(V. .G.S. ..... = .. .. 10V), ..... ..... .ID. . ... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A 8.5A Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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