Click to expand full text
NTE2905 MOSFET P−Ch, Enhancement Mode High Speed Switch
Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D P−Channel D Isolated Central Mounting Hole D Fast Switching D Ease of Paralleling D Simple Drive Requirements
Absolute Maximum Ratings:
Continuous
TTCC
= =
Drain Current +25°C . . . . . . +100°C . . . . .
.(V. .G.S. .....
= .. ..
−10V), ...... ......
.ID. . ...
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
.
−12A −7.5A
Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −48A Power Dissipation (TC = +25°C), PD . . . .
NTE2905 Datasheet
